Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC, FM25L04B-G
- RS Stock No.:
- 273-7386
- Mfr. Part No.:
- FM25L04B-G
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 97 units)*
$180.614
(exc. GST)
$198.656
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 06 July 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | $1.862 | $180.61 |
| 194 + | $1.641 | $159.18 |
*price indicative
- RS Stock No.:
- 273-7386
- Mfr. Part No.:
- FM25L04B-G
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4kB | |
| Product Type | FRAM | |
| Organisation | 512 x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 20MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | Restriction of hazardous substances (RoHS) | |
| Maximum Operating Temperature | 85°C | |
| Number of Words | 512 | |
| Automotive Standard | No | |
| Minimum Operating Temperature | 40°C | |
| Maximum Supply Voltage | 3.6V | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2.7V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4kB | ||
Product Type FRAM | ||
Organisation 512 x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 20MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals Restriction of hazardous substances (RoHS) | ||
Maximum Operating Temperature 85°C | ||
Number of Words 512 | ||
Automotive Standard No | ||
Minimum Operating Temperature 40°C | ||
Maximum Supply Voltage 3.6V | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2.7V | ||
The Infineon FRAM is a 4 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
Related links
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