ON Semi MJF45H11G PNP Transistor, 10 (Continuous) A, 20 (Peak) A, 80 V, 3-Pin TO-220

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): KR
Product Details

The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.

Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 10 (Continuous) A, 20 (Peak) A
Maximum Collector Emitter Voltage 80 V
Package Type TO-220
Mounting Type Through Hole
Maximum Power Dissipation 36 W
Minimum DC Current Gain 40
Transistor Configuration Isolated
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 20 MHz
Pin Count 3
Number of Elements per Chip 1
Width 4.9mm
Transistor Material Si
Maximum Base Emitter Saturation Voltage 1.5 V dc
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Dimensions 10.63 x 4.9 x 16.12mm
Maximum Collector Emitter Saturation Voltage 1 V dc
Height 16.12mm
Length 10.63mm
600 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each (In a Tube of 50)
$ 1.78
(exc. GST)
$ 1.96
(inc. GST)
units
Per unit
Per Tube*
50 - 100
$1.78
$89.00
150 - 200
$1.531
$76.55
250 +
$1.258
$62.90
*price indicative
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