onsemi Digital Transistor, 50 V NPN 100 mA Surface SOT-563, 6-Pin
- RS Stock No.:
- 186-7192
- Mfr. Part No.:
- NSBC114EDXV6T1G
- Brand:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 186-7192
- Mfr. Part No.:
- NSBC114EDXV6T1G
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SOT-563 | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Minimum DC Current Gain hFE | 35 | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Emitter Base Voltage VEBO | 10V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 0.25V | |
| Transistor Polarity | NPN | |
| Maximum Continuous Collector Current Ic | 100mA | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 6 | |
| Length | 2.2mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 1.1mm | |
| Width | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Package Type SOT-563 | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Collector Base Voltage VCBO 50V | ||
Minimum DC Current Gain hFE 35 | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Emitter Base Voltage VEBO 10V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V | ||
Transistor Polarity NPN | ||
Maximum Continuous Collector Current Ic 100mA | ||
Maximum Operating Temperature 150°C | ||
Pin Count 6 | ||
Length 2.2mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 1.1mm | ||
Width 2.2mm | ||
Automotive Standard AEC-Q101 | ||
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
These Devices are Pb-Free, Halogen Free/BFR Free