onsemi Transistor, -10 A PNP, -80 V, 3-Pin TO-220
- RS Stock No.:
- 184-0971
- Mfr. Part No.:
- MJF45H11G
- Brand:
- onsemi
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 tube of 50 units)*
$74.90
(exc. GST)
$82.40
(inc. GST)
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In Stock
- 50 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | $1.498 | $74.90 |
| 100 - 150 | $1.461 | $73.05 |
| 200 + | $1.439 | $71.95 |
*price indicative
- RS Stock No.:
- 184-0971
- Mfr. Part No.:
- MJF45H11G
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Isolated | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 40 | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Transistor Polarity | PNP | |
| Maximum Transition Frequency ft | 20MHz | |
| Maximum Power Dissipation Pd | 36W | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 0.42mm | |
| Height | 1.18mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Isolated | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 40 | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Transistor Polarity PNP | ||
Maximum Transition Frequency ft 20MHz | ||
Maximum Power Dissipation Pd 36W | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 0.42mm | ||
Height 1.18mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
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