onsemi 1200 V 40 A Rectifier & Schottky Diode Schottky 3-Pin TO-247-3LD NDSH40120CDN
- RS Stock No.:
- 261-9557
- Mfr. Part No.:
- NDSH40120CDN
- Brand:
- onsemi
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$25.82
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$28.40
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 9 | $25.82 |
| 10 - 99 | $25.32 |
| 100 - 249 | $24.81 |
| 250 - 399 | $24.32 |
| 400 + | $23.85 |
*price indicative
- RS Stock No.:
- 261-9557
- Mfr. Part No.:
- NDSH40120CDN
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | NDSH40120CDN | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 123A | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.07mm | |
| Height | 4.82mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series NDSH40120CDN | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 123A | ||
Peak Reverse Current Ir 200μA | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Length 41.07mm | ||
Height 4.82mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L
The ON Semiconductor schottky diodes & rectifiers silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It consist of no reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets silicon carbide as the next generation of power semiconductor.
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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