Infineon 650 V 10 A Diode 2-Pin D2PAK

RS Stock No.:: 258-0964P
Mfr. Part No.:: IDK10G65C5XTMA2
Brand:: Infineon

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Subtotal 10 units (supplied on a continuous strip)*

$63.10

(exc. GST)

$69.40

(inc. GST)

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Units	Per unit
10 - 99	$6.31
100 - 249	$6.16
250 - 499	$5.20
500 +	$5.07

*price indicative

RS Stock No.:: 258-0964P
Mfr. Part No.:: IDK10G65C5XTMA2
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Diode
	Mount Type	Surface
	Package Type	TO-263
	Maximum Continuous Forward Current If	10A
	Peak Reverse Repetitive Voltage Vrrm	650V
	Series	IDK04G65C5
	Pin Count	2
	Maximum Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Peak Reverse Current Ir	180μA
	Maximum Operating Temperature	175°C
	Standards/Approvals	J-STD20 and JESD22
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type Diode
	Mount Type Surface
	Package Type TO-263
	Maximum Continuous Forward Current If 10A
	Peak Reverse Repetitive Voltage Vrrm 650V
	Series IDK04G65C5
	Pin Count 2
	Maximum Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Peak Reverse Current Ir 180μA
	Maximum Operating Temperature 175°C
	Standards/Approvals J-STD20 and JESD22
	Automotive Standard No

Datasheet - IDK10G65C5XTMA2

The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.

Revolutionary semiconductor material - Silicon Carbide

Benchmark switching behaviour

No reverse recovery/ No forward recovery

Temperature independent switching behaviour

Enabling higher frequency / increased power density solutions

Higher system reliability due to lower operating temperatures

Reduced EMI