Infineon 650 V 20 A Schottky Barrier Diode Schottky 10-Pin D2PAK IDDD20G65C6XTMA1
- RS Stock No.:
- 244-0895
- Mfr. Part No.:
- IDDD20G65C6XTMA1
- Brand:
- Infineon
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$12.94
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$14.23
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Units | Per unit |
|---|---|
| 1 - 9 | $12.94 |
| 10 - 99 | $12.62 |
| 100 - 249 | $12.31 |
| 250 - 499 | $12.00 |
| 500 + | $11.72 |
*price indicative
- RS Stock No.:
- 244-0895
- Mfr. Part No.:
- IDDD20G65C6XTMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Schottky Barrier Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDDD20G65C6 | |
| Rectifier Type | Schottky | |
| Pin Count | 10 | |
| Peak Reverse Current Ir | 2μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 99A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Schottky Barrier Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDDD20G65C6 | ||
Rectifier Type Schottky | ||
Pin Count 10 | ||
Peak Reverse Current Ir 2μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 99A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC (J-STD20 and JESD22) | ||
Automotive Standard No | ||
Infineon Technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The CoolSiC™ generation 6(G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system
Best in class forward voltage (1.25 V)
Best in class figure of merit (Qc x VF)
High dv/dt ruggedness (150 V/ns)
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