STMicroelectronics 650 V 4 A Diode 2-Pin D2PAK STPSC4H065B-TR
- RS Stock No.:
- 201-0882
- Mfr. Part No.:
- STPSC4H065B-TR
- Brand:
- STMicroelectronics
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 620 | $2.44 | $24.40 | - |
| 630 - 1240 | $2.417 | $24.17 | - |
| 1250 + | $2.341 | $23.41 | 4% |
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- RS Stock No.:
- 201-0882
- Mfr. Part No.:
- STPSC4H065B-TR
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 35μA | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Maximum Operating Temperature | 175°C | |
| Diameter | 3.75mm | |
| Standards/Approvals | No | |
| Width | 10mm | |
| Length | 28.25mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Reverse Current Ir 35μA | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Maximum Operating Temperature 175°C | ||
Diameter 3.75mm | ||
Standards/Approvals No | ||
Width 10mm | ||
Length 28.25mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
No reverse recovery charge in application current range
Switching behavior independent of temperature
High forward surge capability
Power efficient product
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