N-Channel MOSFET, 2.9 A, 60 V, 3-Pin SOT-23 Diodes Inc DMN6140L-7
- RS Stock No.:
- 921-1120
- Mfr. Part No.:
- DMN6140L-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 50 units)**
$14.75
(exc. GST)
$16.25
(inc. GST)
400 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Pack** |
---|---|---|
50 - 700 | $0.295 | $14.75 |
750 - 1450 | $0.29 | $14.50 |
1500 + | $0.285 | $14.25 |
**price indicative
- RS Stock No.:
- 921-1120
- Mfr. Part No.:
- DMN6140L-7
- Brand:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 2.9 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 170 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 1.3 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 8.6 nC @ 10 V | |
Length | 3mm | |
Width | 1.4mm | |
Transistor Material | Si | |
Forward Diode Voltage | 1V | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.9 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 170 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8.6 nC @ 10 V | ||
Length 3mm | ||
Width 1.4mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
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