N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXYS IXFA22N65X2

RS Stock No.:: 917-1451
Mfr. Part No.:: IXFA22N65X2
Brand:: IXYS

N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXYS IXFA22N65X2

This image is representative of the product range

Available for back order.

Price (ex. GST) Each (In a Pack of 2)

$8.895

(exc. GST)

$9.785

(inc. GST)

Units	Per unit	Per Pack*
2 - 12	$8.895	$17.79
14 - 24	$8.675	$17.35
26 +	$8.54	$17.08

*price indicative

RS Stock No.:: 917-1451
Mfr. Part No.:: IXFA22N65X2
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series

The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	22 A
Maximum Drain Source Voltage	650 V
Package Type	D2PAK (TO-263)
Series	HiperFET, X2-Class
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	145 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	2.7V
Maximum Power Dissipation	390 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	37 nC @ 10 V
Length	10.41mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	11.05mm
Height	4.83mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.4V