P-Channel MOSFET, 12 A, 55 V, 3-Pin D2PAK Infineon IRF9Z24NSTRLPBF

RS Stock No.:: 915-4991
Mfr. Part No.:: IRF9Z24NSTRLPBF
Brand:: Infineon

P-Channel MOSFET, 12 A, 55 V, 3-Pin D2PAK Infineon IRF9Z24NSTRLPBF

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Discontinued product

RS Stock No.:: 915-4991
Mfr. Part No.:: IRF9Z24NSTRLPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	55 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	175 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	19 nC @ 10 V
Width	11.3mm
Length	10.67mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	4.83mm
Forward Diode Voltage	1.6V