N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon BSP603S2LHUMA1

RS Stock No.:: 911-4820
Mfr. Part No.:: BSP603S2LHUMA1
Brand:: Infineon

N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon BSP603S2LHUMA1

This image is representative of the product range

Available for back order.

Price (ex. GST) Each (On a Reel of 4000)

$1.687

(exc. GST)

$1.856

(inc. GST)

Units	Per unit	Per Reel*
4000 - 4000	$1.687	$6,748.00
8000 - 12000	$1.645	$6,580.00
16000 +	$1.62	$6,480.00

*price indicative

RS Stock No.:: 911-4820
Mfr. Part No.:: BSP603S2LHUMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.2 A
Maximum Drain Source Voltage	55 V
Package Type	SOT-223
Series	OptiMOS™
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	3.5mm
Typical Gate Charge @ Vgs	31 nC @ 10 V
Length	6.5mm
Transistor Material	Si
Height	1.6mm
Minimum Operating Temperature	-55 °C