N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon BSP603S2LHUMA1

RS Stock No.:: 462-2935
Mfr. Part No.:: BSP603S2LHUMA1
Brand:: Infineon

N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon BSP603S2LHUMA1

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Subtotal (1 pack of 10 units)**

$28.49

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$31.34

(inc. GST)

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Units	Per unit	Per Pack**
10 - 990	$2.849	$28.49
1000 +	$2.801	$28.01

**price indicative

RS Stock No.:: 462-2935
Mfr. Part No.:: BSP603S2LHUMA1
Brand:: Infineon

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

Infineon OptiMOS™ Series MOSFET, 5.2A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP603S2LHUMA1

This N-channel MOSFET is engineered for efficient performance across various electrical applications. With a maximum continuous drain current of 5.2A and a maximum drain-source voltage of 55V, it provides robust capabilities for power management and control, making it an important component for professionals in automotive and electronics industries.

Features & Benefits

• Low RDS(on) minimises power loss during operation
• Maximum gate threshold voltage improves switching efficiency
• Surface mount design facilitates integration into compact PCBs
• AEC-qualified to meet stringent automotive standards
• High-temperature operation rated up to +150°C for durability

Applications

• Power management in automotive electronics
• Suitable for DC-DC converters in electric vehicles
• Utilised in motor control for robotics and automation
• Load switch in consumer electronics

What is the typical gate charge at 10V?

The typical gate charge is 31nC, optimising switching performance at 10V.

Is this suitable for applications in high-temperature environments?

Yes, it operates reliably at temperatures up to +150°C, ideal for challenging conditions.

How does this component handle significant current loads?

With a maximum continuous drain current of 5.2A, it effectively manages high loads while maintaining performance.

Can this MOSFET effectively reduce energy losses?

Yes, the low RDS(on) feature minimises on-state resistance, aiding in reducing energy losses during operation.

Does this product adhere to environmental standards?

Yes, it is RoHS compliant, ensuring it meets environmental safety standards for electronic components.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.2 A
Maximum Drain Source Voltage	55 V
Series	OptiMOS™
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	31 nC @ 10 V
Transistor Material	Si
Width	3.5mm
Length	6.5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Automotive Standard	AEC
Forward Diode Voltage	1.1V
Height	1.6mm
Minimum Operating Temperature	-55 °C