Infineon HEXFET N-Channel MOSFET, 210 A, 60 V, 3-Pin TO-220 IRFB3206GPBF

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Packaging Options:
RS Stock No.:
907-5123P
Mfr. Part No.:
IRFB3206GPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

210 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Width

4.83mm

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

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