Infineon HEXFET N-Channel MOSFET, 210 A, 60 V, 3-Pin TO-220 IRFB3206GPBF

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Packaging Options:
RS Stock No.:
907-5123P
Mfr. Part No.:
IRFB3206GPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

210 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

10.67mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

29 nC @ 10 V

Width

4.83mm

Forward Diode Voltage

1.3V

Height

16.51mm

Minimum Operating Temperature

-55 °C

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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