Toshiba TK N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK TK10P60W,RVQ(S
- RS Stock No.:
- 896-2640
- Mfr. Part No.:
- TK10P60W,RVQ(S
- Brand:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$15.53
(exc. GST)
$17.085
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Last RS stock
- Final 1,220 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | $3.106 | $15.53 |
| 25 - 120 | $3.034 | $15.17 |
| 125 - 245 | $2.962 | $14.81 |
| 250 - 495 | $2.89 | $14.45 |
| 500 + | $2.818 | $14.09 |
*price indicative
- RS Stock No.:
- 896-2640
- Mfr. Part No.:
- TK10P60W,RVQ(S
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.7 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | TK | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 430 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Maximum Power Dissipation | 80 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 7.18mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 6.6mm | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Height | 2.3mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.7 A | ||
Maximum Drain Source Voltage 600 V | ||
Series TK | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 430 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Maximum Power Dissipation 80 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 7.18mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 6.6mm | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Height 2.3mm | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
Related links
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