N-Channel MOSFET, 70 A, 40 V, 3-Pin TO-220 Infineon IPP048N04NGXKSA1

RS Stock No.:: 892-2346
Mfr. Part No.:: IPP048N04NGXKSA1
Brand:: Infineon

N-Channel MOSFET, 70 A, 40 V, 3-Pin TO-220 Infineon IPP048N04NGXKSA1

This image is representative of the product range

230 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 10)

$2.027

(exc. GST)

$2.23

(inc. GST)

Units	Per unit	Per Pack*
10 - 10	$2.027	$20.27
20 - 20	$1.976	$19.76
30 +	$1.945	$19.45
*price indicative

RS Stock No.:: 892-2346
Mfr. Part No.:: IPP048N04NGXKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	70 A
Maximum Drain Source Voltage	40 V
Package Type	TO-220
Series	OptiMOS 3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	79 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.572mm
Typical Gate Charge @ Vgs	31 nC @ 10 V
Length	10.36mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	0.89V
Height	15.95mm