N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-3PN Toshiba TK16J60W,S1VQ(O
- RS Stock No.:
- 891-2917
- Mfr. Part No.:
- TK16J60W,S1VQ(O
- Brand:
- Toshiba
On back order for despatch 19/08/2024, delivery within 5 working days from despatch date.
Price (ex. GST) Each
$6.35
(exc. GST)
$6.99
(inc. GST)
Units | Per unit |
|---|---|
| 1 - 9 | $6.35 |
| 10 - 49 | $6.21 |
| 50 - 99 | $6.09 |
| 100 - 249 | $5.90 |
| 250 + | $5.72 |
- RS Stock No.:
- 891-2917
- Mfr. Part No.:
- TK16J60W,S1VQ(O
- Brand:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 15.8 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-3PN |
| Series | TK |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Power Dissipation | 130 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Length | 15.5mm |
| Width | 4.5mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Forward Diode Voltage | 1.7V |
| Height | 20mm |
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