N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220F onsemi FDPF10N50UT

RS Stock No.:: 864-8578
Mfr. Part No.:: FDPF10N50UT
Brand:: onsemi

N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220F onsemi FDPF10N50UT

This image is representative of the product range

15 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 5)

$3.172

(exc. GST)

$3.489

(inc. GST)

Units	Per unit	Per Pack*
5 - 10	$3.172	$15.86
15 - 20	$3.094	$15.47
25 +	$3.044	$15.22

*price indicative

RS Stock No.:: 864-8578
Mfr. Part No.:: FDPF10N50UT
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	8 A
Maximum Drain Source Voltage	500 V
Package Type	TO-220F
Series	UniFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.05 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	42 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	10.36mm
Width	4.9mm
Typical Gate Charge @ Vgs	18 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	16.07mm