N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 onsemi FCH76N60N

RS Stock No.:: 864-4699
Mfr. Part No.:: FCH76N60N
Brand:: onsemi

N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 onsemi FCH76N60N

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

Price (ex. GST) Each (In a Tube of 30)

$22.161

(exc. GST)

$24.377

(inc. GST)

Units	Per unit	Per Tube*
30 +	$22.161	$664.83

*price indicative

RS Stock No.:: 864-4699
Mfr. Part No.:: FCH76N60N
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

SupreMOS® MOSFET, Fairchild Semiconductor

Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	76 A
Maximum Drain Source Voltage	600 V
Series	SupreMOS
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	36 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	543 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.82mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	218 nC @ 10 V
Length	15.87mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	20.82mm