N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 onsemi FCH47N60NF

RS Stock No.:: 145-5482
Mfr. Part No.:: FCH47N60NF
Brand:: onsemi

N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 onsemi FCH47N60NF

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Price (ex. GST) Each (In a Tube of 30)

$21.297

(exc. GST)

$23.427

(inc. GST)

Units	Per unit	Per Tube*
30 - 30	$21.297	$638.91
60 - 90	$20.765	$622.95
120 +	$20.445	$613.35

*price indicative

RS Stock No.:: 145-5482
Mfr. Part No.:: FCH47N60NF
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

SupreMOS® MOSFET, Fairchild Semiconductor

Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	46 A
Maximum Drain Source Voltage	600 V
Series	SupreMOS
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	64 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	368 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	15.87mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	121 nC @ 10 V
Number of Elements per Chip	1
Width	4.82mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	20.82mm