N-Channel MOSFET, 20 A, 700 V, 3-Pin TO-220 Infineon IPP65R190E6XKSA1

RS Stock No.:: 857-6930
Mfr. Part No.:: IPP65R190E6XKSA1
Brand:: Infineon

N-Channel MOSFET, 20 A, 700 V, 3-Pin TO-220 Infineon IPP65R190E6XKSA1

This image is representative of the product range

Available for back order.

Price (ex. GST) Each (In a Tube of 500)

$3.56

(exc. GST)

$3.92

(inc. GST)

Units	Per unit	Per Tube*
500 - 500	$3.56	$1,780.00
1000 - 2000	$3.547	$1,773.50
2500 +	$3.52	$1,760.00

*price indicative

RS Stock No.:: 857-6930
Mfr. Part No.:: IPP65R190E6XKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS^™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	700 V
Package Type	TO-220
Series	CoolMOS E6
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	151 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Length	10.36mm
Width	4.57mm
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	73 nC @ 10 V
Height	15.95mm
Minimum Operating Temperature	-55 °C