Dual N-Channel MOSFET, 3 A, 50 V, 8-Pin SOIC Infineon IRF7103TRPBF

RS Stock No.:: 831-2865
Mfr. Part No.:: IRF7103TRPBF
Brand:: Infineon

Dual N-Channel MOSFET, 3 A, 50 V, 8-Pin SOIC Infineon IRF7103TRPBF

This image is representative of the product range

Available for back order.

Price (ex. GST) Each (In a Pack of 20)

$1.145

(exc. GST)

$1.259

(inc. GST)

Units	Per unit	Per Pack*
20 - 980	$1.145	$22.90
1000 - 1980	$1.125	$22.50
2000 +	$1.104	$22.08

*price indicative

RS Stock No.:: 831-2865
Mfr. Part No.:: IRF7103TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: PH

Product Details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3 A
Maximum Drain Source Voltage	50 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	12 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	5mm
Width	4mm
Transistor Material	Si
Height	1.5mm
Minimum Operating Temperature	-55 °C