N-Channel MOSFET, 9.7 A, 100 V, 3-Pin D2PAK Infineon IRF520NSTRLPBF

RS Stock No.:: 831-2821
Mfr. Part No.:: IRF520NSTRLPBF
Brand:: Infineon

N-Channel MOSFET, 9.7 A, 100 V, 3-Pin D2PAK Infineon IRF520NSTRLPBF

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Subtotal (1 pack of 5 units)**

$7.98

(exc. GST)

$8.78

(inc. GST)

10 In Global stock for delivery within 5 working day(s)*

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Units	Per unit	Per Pack**
5 - 195	$1.596	$7.98
200 - 395	$1.568	$7.84
400 +	$1.544	$7.72

**price indicative

RS Stock No.:: 831-2821
Mfr. Part No.:: IRF520NSTRLPBF
Brand:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NSTRLPBF

This MOSFET is designed for efficient switching and amplification across various applications. Its high power handling capacity offers versatility in the fields of automation and electronics. With advanced process technology, this device ensures performance and reliability, making it suitable for operational environments. The characteristics of this MOSFET enhance circuit performance significantly.

Features & Benefits

• Low on-resistance contributes to improved energy efficiency
• High drain current rating of 9.7A supports robust performance
• Maximum drain-source voltage of 100V provides application flexibility
• Enhancement mode enables effective switching capabilities
• Surface mount design allows for compact PCB layouts

Applications

• Employed in power management systems for energy conversion
• Suitable for automation controls requiring rapid switching
• Applied in motor control circuits for precision
• Utilised in renewable energy systems such as solar inverters
• Used in audio amplifiers to enhance sound quality

What type of mounting is suitable for this device?

This component features a surface mount design, making it compatible with automated PCB assembly processes and ideal for high-density layouts.

Can it manage high temperatures during operation?

Yes, it has a maximum operating temperature of +175°C, making it apt for harsh environments without compromising performance.

Is this suitable for applications requiring fast switching?

Yes, its rapid switching speed enhances performance in applications like PWM and DC-DC converters.

What is the inductance characteristic of this device?

The internal drain inductance is typically 4.5nH, contributing to its responsive operation.

How is power dissipation handled in this MOSFET?

It allows for a maximum power dissipation of 48W, ensuring thermal stability and effective performance in various circuits.

For these production packs, non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.7 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	48 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.65mm
Transistor Material	Si
Number of Elements per Chip	1
Length	10.67mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	25 nC
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V
Height	4.83mm