N-Channel MOSFET, 40 A, 25 V, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

RS Stock No.:: 827-5296
Mfr. Part No.:: BSZ060NE2LSATMA1
Brand:: Infineon

N-Channel MOSFET, 40 A, 25 V, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

This image is representative of the product range

24900 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 25)

$1.073

(exc. GST)

$1.18

(inc. GST)

Units	Per unit	Per Pack*
25 - 1225	$1.073	$26.825
1250 +	$1.047	$26.175

*price indicative

RS Stock No.:: 827-5296
Mfr. Part No.:: BSZ060NE2LSATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	25 V
Series	OptiMOS™
Package Type	TSDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	8.1 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	26 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	3.4mm
Typical Gate Charge @ Vgs	9.1 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	3.4mm
Height	1.1mm
Minimum Operating Temperature	-55 °C