N-Channel MOSFET, 30 A, 75 V, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1

RS Stock No.:: 827-5120
Mfr. Part No.:: IPD30N08S2L21ATMA1
Brand:: Infineon

N-Channel MOSFET, 30 A, 75 V, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1

This image is representative of the product range

Available for back order.

Price (ex. GST) Each (In a Pack of 25)

$2.105

(exc. GST)

$2.315

(inc. GST)

Units	Per unit	Per Pack*
25 - 600	$2.105	$52.625
625 - 1225	$2.076	$51.90
1250 +	$2.034	$50.85

*price indicative

RS Stock No.:: 827-5120
Mfr. Part No.:: IPD30N08S2L21ATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	75 V
Series	OptiMOS™
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	26 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	136 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.73mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	56 nC @ 10 V
Width	6.22mm
Number of Elements per Chip	1
Transistor Material	Si
Height	2.41mm
Minimum Operating Temperature	-55 °C