N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS123NH6327XTSA1

RS Stock No.:: 827-0011
Mfr. Part No.:: BSS123NH6327XTSA1
Brand:: Infineon

N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS123NH6327XTSA1

This image is representative of the product range

On back order for despatch 06/05/2025, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (On a Reel of 500)

$0.184

(exc. GST)

$0.202

(inc. GST)

Units	Per unit	Per Reel*
500 - 500	$0.184	$92.00
1000 - 1000	$0.18	$90.00
1500 +	$0.177	$88.50
*price indicative

RS Stock No.:: 827-0011
Mfr. Part No.:: BSS123NH6327XTSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™ Small Signal MOSFETs

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	190 mA
Maximum Drain Source Voltage	100 V
Series	OptiMOS
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	10 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.8V
Minimum Gate Threshold Voltage	0.8V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	0.6 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Width	1.3mm
Length	2.9mm
Height	1mm
Minimum Operating Temperature	-55 °C