Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 826-9954
- Distrelec Article No.:
- 304-44-425
- Mfr. Part No.:
- BSS138NH6327XTSA2
- Brand:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 500 - 500 | $0.13 | $65.00 |
| 1000 - 1000 | $0.127 | $63.50 |
| 1500 + | $0.125 | $62.50 |
*price indicative
- RS Stock No.:
- 826-9954
- Distrelec Article No.:
- 304-44-425
- Mfr. Part No.:
- BSS138NH6327XTSA2
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Forward Voltage Vf | 0.83V | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Forward Voltage Vf 0.83V | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 6Ω Maximum Drain Source Resistance - BSS138NH6327XTSA2
This MOSFET is a compact N-channel enhancement device designed for low-power switching in surface-mount assemblies. It operates reliably across a wide temperature span for demanding environments and is supplied in a three-pin SOT-23 package suitable for automated PCB assembly. Its configuration supports controlled gate-driven switching within common low-voltage systems.
Features and Benefits:
• 60V drain voltage rating enables higher-voltage switching
• 6Ω maximum RDS(on) minimises conduction losses in small-signal tasks
• 230mA continuous drain current supports low-current load control
• 360mW power dissipation handles modest thermal loads
• 1nC typical gate charge allows faster, efficient switching
• 20V maximum gate-source voltage prevents overdrive in drive circuits
• 6Ω maximum RDS(on) minimises conduction losses in small-signal tasks
• 230mA continuous drain current supports low-current load control
• 360mW power dissipation handles modest thermal loads
• 1nC typical gate charge allows faster, efficient switching
• 20V maximum gate-source voltage prevents overdrive in drive circuits
Applications
• Suitable for automotive sensor interface circuits
• Ideal for battery management low-current switching
• Used for signal-level load disconnect in electronics
• Can be used for power sequencing in control modules
• Appropriate for temperature-stressed industrial electronics
• Ideal for battery management low-current switching
• Used for signal-level load disconnect in electronics
• Can be used for power sequencing in control modules
• Appropriate for temperature-stressed industrial electronics
What ambient temperatures can it be used in reliably?
It is rated for continuous operation from -55°C up to 150°C, accommodating extreme cold starts and elevated operating temperatures.
What mounting and package considerations should designers note?
The device is supplied in a SOT-23 surface-mount 3-pin package optimised for space-constrained PCBs and automated reflow soldering.
How does gate charge affect switching design?
With a typical gate charge of 1nC, gate driver requirements are modest, reducing required drive current and improving switching speed in low-energy applications.
What limits should be observed to avoid device stress?
Keep gate-source voltage within ±20V and ensure dissipation does not exceed 360mW under given thermal conditions to prevent overstress.
Related links
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