Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

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Subtotal (1 pack of 20 units)*

$10.64

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$11.70

(inc. GST)

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  • 1,720 unit(s) ready to ship from another location
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20 - 620$0.532$10.64
640 - 1240$0.519$10.38
1260 +$0.512$10.24

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Packaging Options:
RS Stock No.:
812-3205
Mfr. Part No.:
SI4178DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Series

Si4178DY

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

0.85V

Maximum Power Dissipation Pd

5W

Typical Gate Charge Qg @ Vgs

7.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.55mm

Length

5mm

Width

4 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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