N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3

RS Stock No.:: 812-3205
Mfr. Part No.:: SI4178DY-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3

This image is representative of the product range

2300 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 20)

$0.847

(exc. GST)

$0.932

(inc. GST)

Units	Per unit	Per Pack*
20 - 620	$0.847	$16.94
640 - 1240	$0.826	$16.52
1260 +	$0.814	$16.28

*price indicative

RS Stock No.:: 812-3205
Mfr. Part No.:: SI4178DY-T1-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.4V
Maximum Power Dissipation	5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Transistor Material	Si
Width	4mm
Length	5mm
Typical Gate Charge @ Vgs	7.5 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1.55mm