N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3

RS Stock No.:: 165-7249
Mfr. Part No.:: SI4178DY-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3

This image is representative of the product range

2300 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 2500)

$0.405

(exc. GST)

$0.445

(inc. GST)

Units	Per unit	Per Reel*
2500 - 2500	$0.405	$1,012.50
5000 - 7500	$0.395	$987.50
10000 +	$0.389	$972.50

*price indicative

RS Stock No.:: 165-7249
Mfr. Part No.:: SI4178DY-T1-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.4V
Maximum Power Dissipation	5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	4mm
Transistor Material	Si
Length	5mm
Typical Gate Charge @ Vgs	7.5 nC @ 10 V
Height	1.55mm
Minimum Operating Temperature	-55 °C