N-Channel MOSFET, 50 A, 150 V, 3-Pin TO-3PN onsemi FQA46N15

RS Stock No.:: 808-8982
Mfr. Part No.:: FQA46N15
Brand:: onsemi

N-Channel MOSFET, 50 A, 150 V, 3-Pin TO-3PN onsemi FQA46N15

This image is representative of the product range

5 In Global stock for delivery within 5 working day(s)

Price (ex. GST) Each (In a Pack of 5)

$3.202

(exc. GST)

$3.522

(inc. GST)

Units	Per unit	Per Pack*
5 - 5	$3.202	$16.01
10 - 10	$3.122	$15.61
15 +	$3.074	$15.37

*price indicative

RS Stock No.:: 808-8982
Mfr. Part No.:: FQA46N15
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	50 A
Maximum Drain Source Voltage	150 V
Series	QFET
Package Type	TO-3PN
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	42 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	85 nC @ 10 V
Width	5mm
Length	15.8mm
Transistor Material	Si
Number of Elements per Chip	1
Height	20.1mm
Minimum Operating Temperature	-55 °C