N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227 IXYS IXFN44N80Q3

RS Stock No.:: 804-7571
Mfr. Part No.:: IXFN44N80Q3
Brand:: IXYS

N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227 IXYS IXFN44N80Q3

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Available for back order.

Price (ex. GST) Each

$97.85

(exc. GST)

$107.63

(inc. GST)

Units	Per unit
1 +	$97.85

RS Stock No.:: 804-7571
Mfr. Part No.:: IXFN44N80Q3
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

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MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	37 A
Maximum Drain Source Voltage	800 V
Package Type	SOT-227B
Series	HiperFET, Q3-Class
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	780 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Typical Gate Charge @ Vgs	185 nC @ 10 V
Length	38.23mm
Maximum Operating Temperature	+150 °C
Width	25.07mm
Number of Elements per Chip	1
Height	9.6mm
Minimum Operating Temperature	-55 °C