N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227 IXYS IXFN44N80Q3

RS Stock No.:: 168-4753
Mfr. Part No.:: IXFN44N80Q3
Brand:: IXYS

N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227 IXYS IXFN44N80Q3

This image is representative of the product range

On back order for despatch 30/04/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each (In a Tube of 10)

$88.939

(exc. GST)

$97.833

(inc. GST)

Units	Per unit	Per Tube*
10 - 40	$88.939	$889.39
50 +	$80.045	$800.45

*price indicative

RS Stock No.:: 168-4753
Mfr. Part No.:: IXFN44N80Q3
Brand:: IXYS

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: US

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	37 A
Maximum Drain Source Voltage	800 V
Package Type	SOT-227
Series	HiperFET, Q3-Class
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	780 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	25.07mm
Length	38.23mm
Typical Gate Charge @ Vgs	185 nC @ 10 V
Height	9.6mm
Minimum Operating Temperature	-55 °C