N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXYS IXFP14N60P3

RS Stock No.:: 802-4420
Mfr. Part No.:: IXFP14N60P3
Brand:: IXYS

N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXYS IXFP14N60P3

This image is representative of the product range

2 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 5)

$6.32

(exc. GST)

$6.95

(inc. GST)

Units	Per unit	Per Pack*
5 - 10	$6.32	$31.60
15 - 20	$6.162	$30.81
25 +	$6.066	$30.33

*price indicative

RS Stock No.:: 802-4420
Mfr. Part No.:: IXFP14N60P3
Brand:: IXYS

Technical data sheets

IXFA14N60P3, IXFP14N60P3, IXFH14N60P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	14 A
Maximum Drain Source Voltage	600 V
Series	HiperFET, Polar3
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	540 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	327 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.83mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	25 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	10.66mm
Minimum Operating Temperature	-55 °C
Height	16mm