N-Channel MOSFET, 79 A, 30 V, 8-Pin SO-8FL onsemi NTMFS4936NT1G
- RS Stock No.:
- 780-4720
- Mfr. Part No.:
- NTMFS4936NT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)**
$11.19
(exc. GST)
$12.31
(inc. GST)
80 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Pack** |
---|---|---|
10 - 10 | $1.119 | $11.19 |
20 - 40 | $1.085 | $10.85 |
50 - 90 | $1.051 | $10.51 |
100 - 190 | $1.02 | $10.20 |
200 + | $0.989 | $9.89 |
**price indicative
- RS Stock No.:
- 780-4720
- Mfr. Part No.:
- NTMFS4936NT1G
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 79 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SO-8FL | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 4.8 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2V | |
Maximum Power Dissipation | 43 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 5.1mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 19 nC @ 4.5 V | |
Width | 6.1mm | |
Transistor Material | Si | |
Height | 1.1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 79 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SO-8FL | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 43 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5.1mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 19 nC @ 4.5 V | ||
Width 6.1mm | ||
Transistor Material Si | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
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