- RS Stock No.:
- 759-8973
- Mfr. Part No.:
- FDB33N25TM
- Brand:
- onsemi
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Price (ex. GST) Each (In a Pack of 2)
$3.30
(exc. GST)
$3.63
(inc. GST)
Units | Per unit | Per Pack* |
---|---|---|
2 - 198 | $3.30 | $6.60 |
200 - 398 | $3.225 | $6.45 |
400 + | $3.175 | $6.35 |
*price indicative
- RS Stock No.:
- 759-8973
- Mfr. Part No.:
- FDB33N25TM
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 33 A |
Maximum Drain Source Voltage | 250 V |
Package Type | D2PAK (TO-263) |
Series | UniFET |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 94 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 235 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 36.8 nC @ 10 V |
Width | 11.33mm |
Maximum Operating Temperature | +150 °C |
Length | 10.67mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 4.83mm |
Related links
- N-Channel MOSFET, 33 A, 250 V, 3-Pin D2PAK onsemi FDB33N25TM
- N-Channel MOSFET, 33 A, 250 V, 3-Pin D2PAK ROHM RCJ331N25TL
- N-Channel MOSFET, 33 A, 250 V, 3-Pin TO-220F onsemi FDPF33N25T
- N-Channel MOSFET, 33 A, 250 V, 3-Pin TO-220AB onsemi FDP33N25
- N-Channel MOSFET, 50 A, 250 V, 3-Pin D2PAK onsemi FDB2710
- N-Channel MOSFET, 44 A, 250 V, 3-Pin D2PAK onsemi FDB44N25TM
- P-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK onsemi FQB34P10TM
- N-Channel MOSFET, 33 A, 650 V, 3-Pin D2PAK STMicroelectronics STB42N65M5