N-Channel MOSFET, 33 A, 250 V, 3-Pin TO-220AB onsemi FDP33N25

RS Stock No.:: 145-4517
Mfr. Part No.:: FDP33N25
Brand:: onsemi

N-Channel MOSFET, 33 A, 250 V, 3-Pin TO-220AB onsemi FDP33N25

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Price (ex. GST) Each (In a Tube of 50)

$2.706

(exc. GST)

$2.977

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$2.706	$135.30
250 +	$2.436	$121.80

*price indicative

RS Stock No.:: 145-4517
Mfr. Part No.:: FDP33N25
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	33 A
Maximum Drain Source Voltage	250 V
Package Type	TO-220AB
Series	UniFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	94 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	235 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.83mm
Number of Elements per Chip	1
Length	10.67mm
Typical Gate Charge @ Vgs	36.8 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	9.4mm