N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

RS Stock No.:: 754-5421
Mfr. Part No.:: IPB025N10N3GATMA1
Brand:: Infineon

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

This image is representative of the product range

On back order for despatch 07/04/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each

$10.32

(exc. GST)

$11.35

(inc. GST)

Units	Per unit
1 - 249	$10.32
250 - 499	$10.07
500 +	$9.93

RS Stock No.:: 754-5421
Mfr. Part No.:: IPB025N10N3GATMA1
Brand:: Infineon

MOSFET N-ch OptiMOS3 100V 180A TO263-7
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	4.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.45mm
Length	10.31mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	155 nC @ 10 V
Transistor Material	Si
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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