N-Channel MOSFET, 55 A, 80 V, 8-Pin TDSON Infineon BSC123N08NS3GATMA1

RS Stock No.:: 754-5301
Mfr. Part No.:: BSC123N08NS3GATMA1
Brand:: Infineon

N-Channel MOSFET, 55 A, 80 V, 8-Pin TDSON Infineon BSC123N08NS3GATMA1

60 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 5)

$2.358

(exc. GST)

$2.594

(inc. GST)

Units	Per unit	Per Pack*
5 - 1245	$2.358	$11.79
1250 - 2495	$2.298	$11.49
2500 +	$2.264	$11.32

*price indicative

RS Stock No.:: 754-5301
Mfr. Part No.:: BSC123N08NS3GATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	55 A
Maximum Drain Source Voltage	80 V
Package Type	TDSON
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	24 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	66 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	19 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	5.35mm
Width	6.1mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1.1mm