P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 Infineon BSP317PH6327XTSA1

RS Stock No.:: 753-2813
Mfr. Part No.:: BSP317PH6327XTSA1
Brand:: Infineon

P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 Infineon BSP317PH6327XTSA1

This image is representative of the product range

On back order for despatch 13/05/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Pack of 10)

$1.28

(exc. GST)

$1.41

(inc. GST)

Units	Per unit	Per Pack*
10 - 240	$1.28	$12.80
250 - 490	$1.259	$12.59
500 +	$1.235	$12.35
*price indicative

RS Stock No.:: 753-2813
Mfr. Part No.:: BSP317PH6327XTSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	430 mA
Maximum Drain Source Voltage	250 V
Package Type	SOT-223
Series	SIPMOS
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	5 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	6.5mm
Width	3.5mm
Typical Gate Charge @ Vgs	11.6 nC @ 10 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1.6mm