N-Channel MOSFET, 260 mA, 240 V, 3-Pin SOT-89 Infineon BSS87H6327FTSA1
- RS Stock No.:
- 752-8249
- Mfr. Part No.:
- BSS87H6327FTSA1
- Brand:
- Infineon
Available for back order.
Price (ex. GST) Each (In a Pack of 10)
$0.676
(exc. GST)
$0.744
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | $0.676 | $6.76 |
| 50 - 190 | $0.649 | $6.49 |
| 200 - 490 | $0.624 | $6.24 |
| 500 + | $0.611 | $6.11 |
*price indicative
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 752-8249
- Mfr. Part No.:
- BSS87H6327FTSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon SIPMOS® N-Channel MOSFETs
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 260 mA |
| Maximum Drain Source Voltage | 240 V |
| Package Type | SOT-89 |
| Series | SIPMOS® |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7.5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.8V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 2.5mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 3.7 nC @ 10 V |
| Length | 4.5mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 1.5mm |
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