N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3

RS Stock No.:: 710-3320
Mfr. Part No.:: Si4134DY-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3

This image is representative of the product range

1930 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 10)

$1.048

(exc. GST)

$1.153

(inc. GST)

Units	Per unit	Per Pack*
10 +	$1.048	$10.48

*price indicative

RS Stock No.:: 710-3320
Mfr. Part No.:: Si4134DY-T1-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.9 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	14 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip	1
Width	4mm
Length	5mm
Transistor Material	Si
Height	1.5mm
Minimum Operating Temperature	-55 °C