Toshiba 2SK Type N-Channel Field Effect Transistor, 10 A, 100 V Enhancement, 3-Pin 2SK3669(Q)

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Subtotal (1 pack of 5 units)*

$7.25

(exc. GST)

$8.00

(inc. GST)

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  • 615 unit(s) shipping from 06 January 2026
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Units
Per unit
Per Pack*
5 - 20$1.45$7.25
25 - 120$1.408$7.04
125 - 245$1.366$6.83
250 +$1.326$6.63

*price indicative

RS Stock No.:
601-2116
Mfr. Part No.:
2SK3669(Q)
Brand:
Toshiba
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Brand

Toshiba

Product Type

Field Effect Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

100V

Series

2SK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.7V

Typical Gate Charge Qg @ Vgs

8nC

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Width

5.5 mm

Standards/Approvals

RoHS

Length

6.5mm

Height

2.3mm

Automotive Standard

No

COO (Country of Origin):
JP

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