Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3

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Subtotal (1 pack of 5 units)*

$13.18

(exc. GST)

$14.50

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45$2.636$13.18
50 - 95$2.24$11.20
100 - 245$1.99$9.95
250 - 995$1.952$9.76
1000 +$1.912$9.56

*price indicative

Packaging Options:
RS Stock No.:
279-9996
Mfr. Part No.:
SISS5112DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40.7A

Maximum Drain Source Voltage Vds

100V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0149Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

52W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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