Infineon BSZ12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin PG-TSDSON-8

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

$26.92

(exc. GST)

$29.61

(inc. GST)

Add to Basket
Select or type quantity
Last RS stock
  • Final 55 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 45$5.384$26.92
50 - 495$4.476$22.38
500 - 995$3.834$19.17
1000 - 2495$3.764$18.82
2500 +$3.698$18.49

*price indicative

RS Stock No.:
273-5250
Mfr. Part No.:
BSZ12DN20NS3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

200V

Series

BSZ12DN20NS3 G

Package Type

PG-TSDSON-8

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

50W

Typical Gate Charge Qg @ Vgs

6.5nC

Maximum Operating Temperature

150°C

Width

40 mm

Length

40mm

Standards/Approvals

IEC61249-2-21, JEDEC1

Height

1.5mm

Automotive Standard

No

The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and 150 degree Celsius operating temperature. It is a optimized for dc to dc conversion.

Halogen free

RoHS compliant

Pb free lead plating

Very low on resistance

Related links