ROHM R6055VNZ Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-3PF R6055VNZC17
- RS Stock No.:
- 265-5423
- Mfr. Part No.:
- R6055VNZC17
- Brand:
- ROHM
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Subtotal (1 unit)*
$10.75
(exc. GST)
$11.82
(inc. GST)
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In Stock
- Plus 37 unit(s) shipping from 05 January 2026
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Units | Per unit |
|---|---|
| 1 - 9 | $10.75 |
| 10 - 24 | $9.72 |
| 25 - 49 | $9.52 |
| 50 - 99 | $9.32 |
| 100 + | $9.12 |
*price indicative
- RS Stock No.:
- 265-5423
- Mfr. Part No.:
- R6055VNZC17
- Brand:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | R6055VNZ | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.071Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 99W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-Free Plating, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series R6055VNZ | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.071Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 99W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-Free Plating, RoHS | ||
Automotive Standard No | ||
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple
Related links
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