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Microchip TN0606 N-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin TO-92

RS Stock No.:: 264-8910P
Mfr. Part No.:: TN0606N3-G
Brand:: Microchip

Microchip TN0606 N-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin TO-92

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Units	Per unit	Saving
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100 - 240	$1.164	$13.30
250 - 490	$1.142	$38.75
500 +	$1.119	$89.00

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RS Stock No.:: 264-8910P
Mfr. Part No.:: TN0606N3-G
Brand:: Microchip

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-92
	Series	TN0606
	Mount Type	Through Hole
	Pin Count	3
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1W
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Microchip
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-92
	Series TN0606
	Mount Type Through Hole
	Pin Count 3
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1W
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - TN0606N3-G

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

2V maximum low threshold

High input impedance

100pF typical low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage