Infineon HEXFET Type N-Channel MOSFET, 61 A, 55 V TO-252 IRLR3915TRPBF

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Subtotal (1 pack of 2 units)*

$5.93

(exc. GST)

$6.524

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8$2.965$5.93
10 - 98$2.675$5.35
100 - 248$2.08$4.16
250 - 498$1.72$3.44
500 +$1.36$2.72

*price indicative

Packaging Options:
RS Stock No.:
258-3999
Distrelec Article No.:
304-40-553
Mfr. Part No.:
IRLR3915TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

17mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

61nC

Maximum Power Dissipation Pd

120W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Fast Switching

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