Infineon HEXFET Type N-Channel MOSFET, 182 A, 200 V, 3-Pin TO-247AC IRF200P222
- RS Stock No.:
- 258-3958
- Mfr. Part No.:
- IRF200P222
- Brand:
- Infineon
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- RS Stock No.:
- 258-3958
- Mfr. Part No.:
- IRF200P222
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 182A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mount Type | Surface Mount, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.6mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 556W | |
| Typical Gate Charge Qg @ Vgs | 135nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 182A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mount Type Surface Mount, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.6mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 556W | ||
Typical Gate Charge Qg @ Vgs 135nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET StrongIRFET is improved gate, avalanche and dynamic dv/dt ruggedness, it is fully characterized capacitance and avalanche SOA.
Enhanced body diode dv/dt and di/dt capability
Lead-free, RoHS compliant
Related links
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