Infineon HEXFET Type N-Channel MOSFET, 182 A, 200 V, 3-Pin TO-247AC IRF200P222

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
258-3959
Mfr. Part No.:
IRF200P222
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

182A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-247AC

Mount Type

Surface Mount, Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6.6mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

556W

Typical Gate Charge Qg @ Vgs

135nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET StrongIRFET is improved gate, avalanche and dynamic dv/dt ruggedness, it is fully characterized capacitance and avalanche SOA.

Enhanced body diode dv/dt and di/dt capability

Lead-free, RoHS compliant

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