Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

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Subtotal (1 pack of 2 units)*

$7.35

(exc. GST)

$8.084

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8$3.675$7.35
10 - 98$3.245$6.49
100 - 248$2.645$5.29
250 - 498$2.175$4.35
500 +$1.89$3.78

*price indicative

Packaging Options:
RS Stock No.:
258-3881
Mfr. Part No.:
IPG20N06S4L11ATMA2
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Dual N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOSTM-T2

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41nC

Maximum Gate Source Voltage Vgs

±16 V

Maximum Power Dissipation Pd

65W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Maximum Operating Temperature

175°C

Standards/Approvals

AEC Q101

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is dual super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Same thermal and electrical performance as a DPAK with the same die size.

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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